Advanced compound semiconductor devices: We developed advanced electronic and optoelectronic compound semiconductor devices through innovations in materials, process technology and device architectures to promote DoD Basic Research for low power and high speed applications. We are showing InAs fin field effect transistors using InAs nanowires, InP/GaAsSb photodiodes with air bridge, T-shape gate for GaN high electron mobility transistors, GeSn microdisks. Which compound will win: InAs, GaAsSb, GaN or GeSn? Contributors: Yuping Zeng, Peng Cui, Guangyang Lin