The 2016 2nd AFRL Workshop on beta-Ga2O3: Synthesis, Characterization, and Applications will be held on December 12-13, 2016 at the Basic Research Innovation and Collaboration Center (BRICC). The BRICC is located at 4075 Wilson Blvd., Suite 350, Arlington, VA 22203. The meeting will take place in the Liberty Room.
High-Critical Field Strength Materials: A Focus Workshop on Recent Advances in Ga2O3 Materials and Devices and Identification of Scientific Knowledge Gaps
The emergence of β-Ga2O3 as a material for high-power and power-switch applications due to recent developments in bulk crystal availability has created a surge of interest in the field. Device metrics for several applications are very attractive for this transparent conductive oxide with bandgap of 4.9 eV, resulting critical field strength around 8 MV/cm, wide range in doping (1013 cm-3 – 1020 cm-3), and ability to create alloying compounds. Many device breakthroughs have already been achieved including vertical Schottky diodes with 1 kV breakdown, critical field strength measurements > 3.8 MV/cm for lateral FETs, current density > 400 mA/mm, field-plated FETs with breakdown > 700 V, and now enhancement mode FETs with breakdown > 600 V. While these recent accomplishments show great promise for RF and power electronics applications, the full potential for this material system has yet to be realized.
β-Ga2O3 has unique challenges due to its wide bandgap and monoclinic crystal structure. Choices of gate dielectric are limited for MOS applications, p-type doping is not expected, and directional dependence of transport and optical properties is not fully understood. β-Ga2O3 also has relatively poor thermal conductivity, which may prove to be a difficult barrier to overcome for certain applications.
As with most materials discoveries, the end application is often completely different than originally envisioned. We seek to leverage the initial appeal of the more obvious power switching and high voltage applications as a starting point to explore many applications, including electro-optic ones. Rather than comparing various wide bandgap materials based on any one metric, we seek to develop a comprehensive picture of system impact based on power switching, RF, and optoelectronic integration opportunities afforded by the native β-Ga2O3 substrate availability.
The purpose of this workshop is to provide a focused forum to examine the present state of β-Ga2O3 materials and devices and to identify the scientific gaps and challenges to be overcome in order to realize the full potential of this material system. Technical leaders in modeling, material synthesis, material characterization, device fabrication, and applications will be assembled to identify research pathways leading to defining the full application space of Ga2O3 materials through scientific breakthroughs.
The output of the workshop will be a map of current capabilities and critical missing elements needed to guide research investment and coordination strategies. The first day of the workshop will provide an open forum for fundamental research and dual-use applications. The second day will provide a closed forum for application specific discussion among a government audience.
AgendaClick here to view/download the agenda.
RegistrationClick here to registration online.Summary of Knowledge Gap ExerciseClick here to view the Summary of Knowledge Gap Exercise.
SocialClick here to RSVP (yes or no).
LodgingAttendees are responsible for their own lodging. Local hotels in order of their proximity to the BRICC are
Residence Inn Arlington Ballston (click here to obtain the special AFOSR rate)Hilton Arlington Westin Arlington Gateway Holiday Inn ArlingtonComfort Inn Ballston/Arlington
Parking* Limited parking is available in the building for $15.00 per day (Cash, Discover, Master Card and Visa) * Additional parking is available at the Ballston Common Mall
DirectionsClick here to view driving directions.
Local Area DiningClick here for information and map.
ContactDr. Gregg JessenSensors DirectorateAir Force Research LaboratoryPhone: 937-713-8696Email: Gregg.firstname.lastname@example.org